(Invited) MOCVD of III-V Compounds on Silicon Substrate-Status and Challenges

Abstract

III/V-on-Silicon technology for electronic applications demands sophisticated MOCVD reactor design. To address these challenges we developed horizontal MOCVD reactors for 5x200 mm III/V-on-Si applications utilizing planetary motion of the wafer around the center gas inlet. The showerhead technology opens the path to grow compound semiconductor on 300/450 mm wafer. This paper discusses the different developments in the field of MOCVD to facilitate further reduction in production cost and simultaneously improve the device characteristics by using larger wafer size.