(Invited) Mobility Enhancement of Uniaxially Strained Germanium Nanowire MOSFETs

Abstract

Introduction High mobility channel materials are extensively explored to replace strained-Si in MOSFET devices to reduce power consumption by lowering supply voltages, V dd, without degrading circuit performance. Among the various high mobility channel materials, compressively strained-Ge[1-4] is recognized as the most promising option for p-channel FETs due to its significantly high hole-mobility and compatibility with Si-CMOS process. In this paper, Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record-high hole mobility (μ eff = 1922 cm2/Vs) and record-low off-current (2.7x10-9A/μm at V d = -0.5V) were achieved among scaled (sub-100nm L g) Ge MOSFET for the device with the L gof 45nm. Device fabrication Uniaxially strained-Ge nanowire channel was formed by the two-step Ge condensation technique, which induced uniaxial stress along the channel direction[3]. As a gate insulator, 5 nm thick Al2O3 was grown by using ALD. Partly, in order to improve the interface characteristics and hole mobility, MMT-plasma oxidized GeOx / 3.2 nm-Al2O3 stacked gate insulator were adopted[4,5]. Ni(Si)Ge-metal S/D structures were formed by SALICIDE-like process. Detailed device fabrication process was shown in [4]. The Relationship between the wire width, W wire and strain applied to the channel was measured by an immersion high-NA Raman spectroscopy[6] and a NBD measurement. The dependence of strain along the channel direction, ε xx on wire width is shown in Fig.1. Extremely high (-3.8%) strain was evaluated for W wire= 20 nm device, which was almost identical with the value obtained from the NBD measurement. Moreover, extremely high (over -3.9%) strain, which is almost identical with the misfit strain between Ge and Si, was evaluated by strained-Ge nanowire channel formed by improved two-step Ge condensation technique[4]. Mobility enhancement by uniaxial compressive strain In order to estimate the mobility enhancement factors in uniaxially strained-Ge and Si1-x Ge x inversion channels, Poisson-Schrodinger self-consistent solver[7] was used to calculate the effective mass (m eff) values. Here, 6x6 k*p method was used. Figure 2 shows the calculated Ge concentration dependence of inversion layer effective hole mass along [110] channel direction. For Ge (x=1), m eff was calculated to be 0.055m 0 at fully strained condition, i.e., the lattice constant is identical with that of Si in [110] directions. Considering the ratio of m eff, 12 times higher mobility that for unstrained Si can be expected on uniaxially strained-Ge. At these highly strained condition, orientation dependence among (001), (112) and (110) is diminished due to the band deformation. Device characterization Hole mobility was extracted by a split CV method for long-channel and multi-wire devices. Figure 3(a) shows hole-mobility of the fabricated multi-wire MOSFETs. The W wire = 40nm device, which has 95% Ge channel and GeOx / Al2O3 stacked gate insulator, showed a peak hole mobility of 1922 cm2/Vs at N s = 1.7x1012cm-2, which exceeds that of -3.8% strained-Ge nanowire MOSFET with Al2O3 gate stack. Moreover, the obtained mobility at N s = 5x1012cm-2 is corresponding to 5.8 times of the counterpart of a state-of-the-art strained-Si pMOSFETs[1]. Figure 3(b) shows that mobility values for fixed N s increased with Ge concentration, x. The tendency is consistent with the m eff calculation in Fig.2. Figure 4 shows I d-V g characteristics of fabricated strained-Ge nanowire pMOSFET with GeOx / Al2O3 stacked gate insulator. Ion/Ioff ~ 105 has also been attained. And a minimum drain leakage current (I d,off), as low as current 2.7x10-9A/μm at V d = -0.5V, were achieved with L g = 45 nm. This I d,off value is the lowest minimum drain leakage among the previously reported sub-100nm L g strained-Ge devices even though that has a shortest L g. Conclusion s Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μ eff = 1922 cm2/Vs) and record-low off-current (2.7x10-9A/μm at V d = -0.5V) were achieved among scaled (sub-100nm L g) Ge MOSFET for the device with the L gof 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.