Abstract
Memristors, mimicking biological synapse response, are believed to have a great potential for use as an adaptive memory unit in future neuromorphic computing systems. Here we report on fabrication of two-dimensional memristor comprised of layered double hydroxide (LDH) material, covered with graphene layer, serving as a terminal for connecting to electrodes. We demonstrated nonvolatile resistive switching of LDH memristor. Device performance is studied upon replacing graphene semimetal with alternative 2D materials. Comprehensive characterization of the memristor materials was performed with correlated Raman, Electron, and Scanning Probe Microscopy methods.ACKNOWLEDGMENTThis work was supported by the US Department of Defense (Contract #W911QY2220006), 2DCC-MIP NSF cooperative agreement DMR-2039351. Work was performed at JSNN, a member of the Southeastern Nanotechnology Infrastructure Corridor (SENIC) and National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the NSF (ECCS-1542174)
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