Abstract
Solar cell technologies are highly dependent on silicon materials and silicon quantum dots (Si-QDs) with optimal energy bandgap present the potential for further development in high efficiency solar cells. Especially, silicon nanocrystals have a special value as they are generally non-toxic and silicon itself has been widely used on an industrial scale. We discuss how plasma-induced surface engineering of doped Si-QDs can impacts the corresponding optical and photovoltaic properties when the Si-QDs are integrated in solar cell devices as high energy photon down0shifter.
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