Abstract
In recent years, there has been a great deal of success in the development of MgO based tunnel barriers for use in magnetic devices, such as nanoscale magnetic random access memory (MRAM) elements and magnetic field sensors. Much of the focus has been on creating tunnel barriers that have ever-increasing tunneling magnetoresistance values, which today approach as much as 500%, and lower resistance-area products, which are as low as a few Ohm-micrometers squared. These improvements afford the potential for future scaling of MRAM devices into the deep nanometer regime and solid-state CMOS compatible sensors with much improved sensitivity. This paper gives an overview of the fundamental device concepts of these MgO-based structures. Contribution of NIST, not subject to copyright
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