Abstract
Low-temperature (≤250oC) formation of orientation-controlled large-grain (>10 μm) poly-SiGe on amorphous insulator is essential to realize flexible electronics. In line with this, metal-induced crystallization of SiGe is investigated. By employing Au and Sn as catalysts, SiGe crystallization at 250oC and 150oC, respectively, becomes possible. Moreover, a technique for formation of orientation-controlled large-grain crystals is examined by modulation of nucleation in gold-induced crystallization. This achieves selectively (100)- or (111)-oriented large-grain (≥20 μm) crystals on amorphous insulators. This technique is expected to facilitate integration of advanced functional devices onto flexible substrates.
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