Abstract
We discuss CMOS and beyond-CMOS devices for advanced nodes of high performance technologies; from FinFETs and fully-depleted planar SOI devices of today to other fully-depleted devices of tomorrow such as gate-all-around devices (GAA) in horizontal and vertical configuration. We look at the prospects of alternative channel materials such as III-V, germanium, 2D materials and carbon nanotubes, and alternative gate dielectrics such as ferroelectrics. We also briefly discuss developments in device architectures beyond classic MOSFET, such as tunnel FETs and spin-based transport devices. Finally 3D stacking, an approach to device density improvement is also discussed. Design-technology co-optimization (DTCO) became integral and indispensable factor in formation of highly scaled technology.
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