Abstract
In this paper, we present the current technical state of ion implantation into a Cr-doped semi-insulating GaAs substrate. It is shown that low dose implantation to form n layer is relatively well understood and already established as a controlled doping technique. Problems encountered in high dose implantation for n+ layer formation are discussed. Emphasis is on the redistribution behavior of Cr during the post-implantation annealing in Cr-doped semi-insulating substrate with the objective to correlate it with the electrical properties of low-dose implanted layer or to illuminate the complicated situation of high-dose implanted layer.
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