(Invited) Interconnect Metals for Future Integrated Circuits

Abstract

The highest performing microprocessors, memory devices, and other computer chips require the most advanced technologies. Improving performance of the device is much more than just shrinking the dimensions: it requires novel materials innovations. BEOL interconnect performance has been improved by the migration from aluminum-based interconnects and oxide interlayer dielectrics to copper interconnects in a dual inlaid architecture and with low-k dielectrics. Inlaid Cu lines offer higher conductivity, improved electromigration resistance, and a reduced cost of manufacturing; however, as feature sizes continue to scale, metals to replace Cu are being researched. In this presentation, the novel materials innovations being researched to enhance performance, improve reliability, and enable technology scaling for the integrated circuit (IC) industry will be highlighted. A historical perspective on BEOL interconnect challenges and innovations to reduce capacitance and improve conductivity will be shown. Future BEOL interconnect metallizations will be critically reviewed.