Abstract
Multi component films for a range of device applications were deposited by atomic vapor deposition (AVD®). Dysprosium doped HfO2 was studied as a high-k material. All HfDyOx films showed a tegragonal/cubic phase. A Dy concentration of 4% was determined for an optimum increase of the k-value. The material GeSbTe was investigated as a possible candidate for phase change applications. The material was deposited in a wide range of compositions in a controlled fashion. In particular the Ge2Sb2Te5 phase was achieved with good composition, thickness and electrical resistivity uniformity. Gap fill and phase change properties were studied.
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