(Invited) In-Situ Stress Measurement during Electrochemical Processing

Abstract

The electrochemical community often uses in situ wafer curvature and cantilever bending techniques to examine stress development during electrochemical processing. These techniques have been used to examine and quantify surface stress induced by surface charge (electrocapillarity), adsorption processes, and growth stress associated with underpotential deposition (UPD) and electrodeposition. The sensitivity of the stress measurement to surface processes makes this technique particularly relevant for electrochemical studies. For example, we have used in situ surface stress measurements to examine the underpotential deposition of a variety of metals (M) onto (111)-textured Au cantilever electrodes. The stress response clearly shows regions of anion desorption, M–Au bond formation, and in some cases, stress relaxation that can be attributed to surface alloying. This talk will focus on the surface and growth stress that develops during a variety of electrochemical processes, including metal deposition, the formation of elastically strained Pt films for electrocatalysis, and adsorbate-induced surface stress, such as carbon monoxide (CO) on Pt.