Abstract
Programming and retention characteristics of charge-trapping (CT) non-volatile memory (NVM) devices can be enhanced by inserting Al2O3 between Si3N4 and HfO2 as the charge-trapping layer. This is because most of the injecting charges are trapped at Si3N4/Al2O3 interface and Al2O3 also provides a high barrier for electron detrapping. In addition, Compare to those with conventional Si-channel, both programming and erasing speeds are significantly improved by employing a Si0.7Ge0.3 buried channel. Satisfactory retention and excellent endurance characteristics up to 106 P/E cycles with 4.1 V memory window show that the degradation on reliability properties, if it exists, is negligible when SiGe buried channel is introduced.
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