Abstract
This work covers integration of advanced III-V semiconductors on silicon substrate for RF-sensor integration up to very high frequencies of 300 GHz and 670 GHz, respectively, including improved active device performance through intelligent engineering of the co-integrated buffer layers. Several Terahertz Monolithically-Integrated Circuits are presented, which demonstrate good gain performance, low-noise, and improve large-signal behavior through the application of the back-gate.
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