(Invited) High-Speed GaN-Based Micro-Scale Light-Emitting Diodes for Visible-Light Communication

Abstract

The increasing demand for wireless data communication and popularity of solid-state lighting has prompted research into visible-light communication (VLC) systems using GaN-based light-emitting diodes (LEDs). VLC is a promising candidate for next-generation (5G and beyond) light-fidelity (Li-Fi) network systems. To support multi-Gb/s data rates, VLC systems will require efficient LEDs with large modulation bandwidths. Conventional lighting-class LEDs cannot achieve high-speed operation due to their large chip size, large active region volume, and phosphor-converted output. Conversely, micro-scale LEDs (micro-LEDs) offer a viable path to high-speed operation due to their lower parasitic capacitance and ability for operation at high current densities where the carrier lifetime is significantly reduced. Furthermore, conventional c-plane LEDs suffer from polarization-related electric fields, which reduce the overlap between the electron and hole wave functions and lower the carrier recombination rate. Since modulation bandwidth is proportional to the carrier recombination rate (inversely proportional to the carrier lifetime), the overlap between the wave functions should be maximized for high-speed operation. Nonpolar and semipolar orientations have significantly reduced polarization effects and wave function overlaps approaching unity. These orientations can enable high-efficiency LEDs with simultaneously large modulation bandwidths, especially at relatively low current densities. In this work, we introduce VLC and discuss progress on the growth, fabrication, and characterization of high-speed micro-LEDs. Polar (0001), nonpolar (1010), and semipolar (2021) InGaN/GaN micro-LEDs on free-standing GaN substrates are investigated for their small-signal modulation characteristics as a function of current density, temperature, device area, and active region design. We demonstrate that the modulation bandwidths are well correlated with the wave function overlap in the active region by examining the orientation-dependence of the bandwidth. Record modulation bandwidths for GaN-based LEDs above 1 GHz are achieved for the nonpolar and semipolar orientations. We also show the modulation characteristics of an electrically injected nanowire-based LED, which achieves a modulation bandwidth of 1.2 GHz. Finally, we present a small-signal modeling method for determining the RC characteristics, differential carrier lifetime, carrier escape lifetime, and injection efficiency of the LEDs under electrical injection and discuss the results in the context of efficiency droop. Figure 1: Bandwidth vs. current density for the nonpolar LEDs (open black triangles), semipolar LED (open blue circles), and polar c-plane LED (open green squares) compared to other reported polar c-plane LEDs on sapphire or with a flip-chip design and compared to semipolar (1122) LEDs. The bandwidth characteristics for a nanowire-based LED are also included. Also shown are the crystal orientations used in the orientation-dependent bandwidth study. Figure 1