(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates

Abstract

Crack-free AlGaN/GaN heterostructure field-effect transistors on a 200 mm silicon substrate were demonstrated to enable large-volume, low-cost manufacturing technology for GaN power electronics. Low normalized buffer leakage of around 3 × 10-9 A/mm and low normalized three-terminal subthreshold leakage of around 2 × 10-7 A/mm were obtained using highly carbon-doped buffer epilayers. A high three-terminal off-state breakdown voltage of 1.35 kV and a low specific on-resistance of 1.3 mohm-cm2 were achieved on the 4.5-µm-thick device with a 10 µm gate-to-drain spacing. The figure of merit of our device is calculated as 1.4×109 V2ohm-1cm-2