(Invited) High Performance III-V-on-Insulator MOSFETs on Si Realized by Direct Wafer Bonding Applicable to Large Wafer Size

Abstract

MOSFETs using III-V channels with high mobility and low effective mass have been regarded as strongly important for obtaining CMOS under sub 10 nm technology nodes. One of the critical issues to realize III-V MOSFEs is to form high quality III-V films on large size Si wafers. In this paper, we present InGaAs-on-insulator (-OI) fabrication from an InGaAs layer grown on a Si donor wafer with a III-V buffer layer instead of growth on a InP donor wafer. This technology allows us to yield large wafer size scalability of III-V-OI layers up to the Si wafer size of 300mm with a high film quality and low cost. The high film quality has been confirmed by Raman and photoluminescence spectra. In addition, the fabricated InGaAs-OI transistors exhibit the high electron mobility of 1700 cm2/V s and uniform distribution of the leakage current, indicating high layer quality with low defect density.