Abstract
Monolayer Tungsten Diselenide (WSe2) exhibits tremendous advantages as a channel material for next-generation field-effect-transistors (FETs). This paper reviews the relevant physics and properties of WSe2 and highlights the excellent scalability of monolayer WSe2 for ultra-short channel (sub-5 nm) FETs. The crucial role of metal-WSe2 contacts in determining the performance of monolayer WSe2 FETs is also emphasized using experiments guided by ab-initio density functional theory (DFT). With a suitably chosen contact, a back-gated monolayer WSe2 FET on Al2O3 substrate is shown to exhibit both high mobility and high ON-current.
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