Abstract
The high-power high-frequency devices of both GaN and Ga2O3 needs careful thermal management to migrate the self-heating effect during operation. One promising strategy is to integrate GaN and Ga2O3 with a high thermal conductivity substrate such as SiC and diamond. Epitaxial growth, usually at high temperature, met many challenges because of the lattice mismatch and thermal expansion mismatch. Recently, we realized room-temperature bonding of GaN and Ga2O3 with high thermal conductivity substrates via surface activated bonding methods, which can avoid the transition layer necessary for growth method and make the GaN or Ga2O3 device close to the high thermal conductivity substrates as much as possible.
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