(Invited) Heteroatom Functionalization of N- and B-Doped Graphene

Abstract

One of the most important issues in the field of graphene for electronic and optoelectronic applications is how to modulate effectively the density of charge carriers, their mobility and their energy levels. One general strategy for achieving this goal is doping graphene with heteroatoms; in this approach, the properties of graphene are controlled by the nature of the dopant elements and by the percentage of doping. For example, by substituting carbon atoms with nitrogen or boron, it is possible to turn graphene into a semiconductor of n- or p-type, respectively. Both elements are by far the most common dopant elements and graphene doped with these heteroatoms have been widely used in electrocatalysis, as photocatalysts and as electronic materials.Here, we will present our work in the N- and B- functionalization of N- and B-graphene and the influence of the nature of substituent on the electronic properties of the material.References M. Barrejón et al. Chem. Commun. 2015, 51, 16916M. Barrejón et al. Chem. Sci. 2018, 9, 8221H. Gobeze et al. Nanoscale Adv. 2019, 1, 4009L.M. Arellano et al. Chem. Commun. 2019, 55, 9999 Figure 1