Abstract
Our recent advances in growth technique for undoped semi-insulating GaAs single crystal are presented. We have succeeded in reproducible growth of homogeneouse undoped semiinsulating GaAs crystal up to 3 inches in diameter with low dislocation density (\\lesssim1×104 cm-2). The technique includes Liquid Encapsulated Czochralski (LEG) growth technique incorporated with a computer automated diameter control (CADC) and with a newly developed in-situ melt purification process. For reducing the dislocation density, the use of a thermal reflector and the optimization of other parameters were examined and discussed.
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