(Invited) Growth of MnGe Nanostructures for Spintronics Applications

Abstract

Mainstream CMOS technology in today's electronics continues to scale down in the feature size. However, power dissipation per unit area and variability are among two major issues and challenges for the continuing scaling. Spintronics, as an emerging technology that exploits the intrinsic spin of the carriers, could potentially offer power savings, low variability and improved scalability. Using nanoscale materials makes possible heterogeneous integration of dissimilar materials by accommodation of strain and minimizing defects. In this paper, we present work on MnxGe1-x nanostructures. We discuss our nanoscale deposition and nano-epi approach in preparing single-crystalline dilute magnetic Mn0.05Ge0.95 QDs. By the use of MOS capacitor with the Mn0.05Ge0.95 QDs as the channel material and by controlling the electrical field at the gate, we demonstrate the ferromagnetism of the QDs by modulating the hole concentration in the channel. A theoretical understanding of high-Curie temperature nature of Mn0.05Ge0.95 is also provided via DOS simulations.