(Invited) Growth and Characterization of GaN Based Multi-Channel FETs

Abstract

With recent advances in new device architectures such as FIN FETs, Super-Lattice Castellated Field Effect Transistors (SLCFET), and buried dual gate FETs (BRIDGE FET), there is more and more advantages for GaN based multiple channel FETs. By simply increasing the number of channels, the Ns can be increased to several times higher than a single channel device. However, the maximum number of the channels is largely limited by the tensile stress in the AlGaN/GaN materials system. By optimizing the growth conditions and delta doping, we have achieved a sheet resistance as low as 21 Ohm/sq in a 16-channel FET structure. We also found that, by controlling the delta doping, the sheet resistance is linearly scaled with the number of channels.