Abstract
Gallium nitride crystal growth by hydride vapor phase epitaxy (HVPE) method is described. Results of crystallization of unintentionally doped GaN are briefly presented and discussed. Doping with donors, silicon or germanium, is proposed and then examined in order to obtain highly conductive HVPE-GaN. Iron, manganese, and carbon were chosen for changing electrical properties of GaN to semi-insulating. Results of crystallization processes are presented. Structural, optical, and electrical properties of the obtained crystals are shown and discussed in detail.
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