Abstract
We first describe self-organizing graphene ribbon formation by chemical vapor deposition. Graphene ribbons can be formed only on narrow twin crystal regions with a (001) or high-index surface sandwiched between Cu crystals having (111) surfaces. At a relatively low CH4 pressure in Ar/H2, graphene is preferentially nucleated and formed on twin crystals. The preferential nucleation is probably caused by a difference in surface-dependent adsorption energies of reactants. In the second part, we describe newly developed dual-gated graphene transistors. We found that a transistor with a graphene channel irradiated with He ions can have a transport gap up to 380 meV. We then made dual-gated transistors using such a channel and obtained an on-off ratio of 103 at 200 K. The device has a channel region between the dual gates, and the polarity of the transistor can be electrostatically reversed by flipping the bias polarity of one of the dual gates.
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