Abstract
In this paper, we reports our recent studies of the electrical and crystalline properties of heteroepitaxial Ge1-xSnx layers with various Sn content of 0~25%. We examined Ga-doping in strained Ge1-xSnx layers for developing source/drain stressor in CMOS applications and investigated the effect of Sn on the doping profile. The impact of Sn on carrier properties has been also studied with the Hall measurement of Ge1-xSnx/SOI structures. Also, we achieved the epitaxial growth of Ge1-xSnx layers with a Sn content as high as 25% on InP considering misfit between the epitaxial layer and substrate.
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