Abstract
Semiconducting germanium tin (GeSn) alloy has recently emerged as a promising candidate material for optoelectronics and high performance CMOS devices because of its tunable direct bandgap and potential for high electron and hole mobilities. In this work, we perform detailed theoretical analysis to gauge the performance benefits of GeSn as a CMOS channel material. pMOSFETs fabricated on GeSn have been shown to outperform Ge. GeSn n-channel devices have been successfully fabricated and factors limiting its performance are investigated, potential solutions are presented.
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