Abstract
The formation of High-k/SiO2 dipole layer is experimentally observed as the flatband voltage shift of MIS capacitors without high-k film thickness dependence. It is also deduced from the band bending of SiO2 and high-k at the interface by using XPS measurements. As a model to explain the driving force to form the dipole, the areal density difference of oxygen atoms at high-k/SiO2 interface is taken account to predict both the direction and magnitude of the dipoles. This is the only model to give a reasonable explanation to the experimentally observed directions of the dipoles.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
