Abstract
Solution-processing of oxide semiconductor is a promising technique for the simple and low-cost fabrication of oxide thin-film transistors (TFTs). We demonstrate improved TFT characteristics by application of a hydrogen injection and oxidation (HIO) process to the fabrication of high-performance low-temperature oxide TFTs. The compatibility of this technique for flexible substrates was also confirmed when the HIO method was applied to solution-processed metal oxide TFTs.
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