(Invited) Fabrication of N-Polar (Al,Ga,In)N Heterostructures for Transistor Applications

Abstract

This presentation will address the growth of N-polar (000-1) (Al,Ga,In)N/GaN heterostructures by metal-organic chemical vapor deposition (MOCVD) with emphasis on transistor applications. While the N-polar growth direction is in particular advantageous for highly scaled devices operating at frequencies of 30GHz and beyond, results for high power transistors working at lower frequencies will be discussed as well. Differences in the MOCVD growth of N-polar in comparison to metal-polar heterostructures will be described. Prerequisites for the fabrication of high quality (Al,Ga,In)N were the use of misoriented substrates in combination with a careful process optimization.