Abstract
Back-gate Ge-on-insulator metal–oxide–semiconductor field-effect transistors were fabricated using Ge wires grown by lateral liquid phase epitaxy. They exhibited a very high peak hole mobility of 511 cm2/Vs and an on/off current ratio of 106 due to the superior crystalline quality of the Ge wires. The optical properties of the Ge wires were also investigated by micro-photoluminescence spectroscopy, and a direct band gap shrinkage of 45 meV was observed due to the introduction of 0.4% tensile strain.
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