(Invited) Exploring New ALD Processes for Coinage and Transition Metals through Molecularly Engineered Precursors

Abstract

Atomic layer deposition (ALD) of functional materials has gained significant interest during the recent years and a range of new materials has been introduced into semiconducting manufacturing since ‘materials-limited device scaling’ has replaced the days of ‘happy geometric scaling’. The ability to integrate very thin layers into silicon structures has opened the way for a variety of novel applications which enhances the functionality and flexibility for future nanotechnologies. For ALD, precursors are indispensable and there are continuous efforts to develop new or precursors with improved physico-chemical properties.From the precursor engineering point of view, the concept is not only to synthesize one or more arbitrary members of a particular family of ligands, rather rationally introduce distinct changes in the ligand sphere in a systematic manner. This approach provides knowledge on the relationship between the molecular structure of the precursors, their thermal characteristics and reactivity. This presentation reveals how key precursor design parameters strongly influence the efficacy of ALD by comparing representative precursors possessing the same metal centre but different ligands or same ligand structure but different metal centres. Representative cases with coinage and transition metals will be illustrated. Alternative approaches to grow metal films and proof-of-concept applications will be demonstrated.