(Invited) Experimental Quantum Transport in Strained Graphene and SWCNTs - Towards Noems

Abstract

We measure ballistic charge conductivity in strained suspended graphene and observe the theoretically predicted [1] strain-induced scalar and vector potentials. To do so, we built an experimental platform for in-situ quantum transport strain engineering in 2D materials. This instrumentation also permits low temperature (0.3 K) transport in 0 to 9 Tesla magnetic fields. The tunable uniaxial strain (up to 3%) is completely decoupled from the gate-tunable charge density, permitting quantitative understanding of strain effects. We show slippage-free mechanical clamping of high aspect-ratio graphene crystals, where atomically ordered edges are unnecessary for quantitative straintronics. We study in detail transport in a ballistic graphene channel whose length is 90 nm and width is 600 nm. By applying strain up to 0.6 % in this device, we observe that the strain-induced scalar potential shifts its low energy band structure downward by up to 30 meV. We show precise control of the gauge vector potential which reversibly suppresses the conductance. We discuss our progress towards strain engineering in SWCNTs, and calculations showing its potential in valley filtering and tuning electron-hole asymmetric quantum transistors.We conclude with an overview of another project to integrate suspended bilayer graphene devices in planar optical cavities towards achieving fully tunable nano-opto-electro-mechanical (NOEMS) carbon systems. To do so, we discuss a nitrocellulose-based dry-stamping method to manipulate and suspend individual 2D materials [2]. Using this method we assembled optical cavities able to a widely tune Raman scattering and absorption in graphene. [1] A. C. McRae, G. Wei, and A. R. Champagne, Phys. Rev. Applied 11, 054019 (2019). [2] I. G. Rebollo, F. C. Rodrigues-Machado, W. Wright, G. J. Melin, A. R. Champagne, ArXiv:2011.14166 Figure 1