(Invited) Emerging Role of Silicon Carbide and Gallium Nitride Based Power Electronics in Power and Transportation Sectors

Abstract

Free fuel-based energy sources (solar and wind) are demonstrating three long term trends in the electrification of sustainable energy. The three trends point toward a future in which sustainable energy is affordable, abundant and deployed with high energy efficiency. These three trends are going to have major economic, geo-political and environmental benefits to humanity. Driven by advancements in the technology of lithium batteries (cost reduction and increase in energy density), and the availability of low-cost sustainable clean electric power, the electrification of surface and air transportation is going through fundamental disruptive transformation. Volume manufacturing, similar to photovoltaic modules is mainly responsible for the cost reduction of lithium ion batteries. Doubling the volume of cumulative manufacturing leads to a cost reduction of about 22% in lithium ion batteries. Similar to Tesla’s Gigawatt factory in the United States, a number of manufacturers in China, Japan and South Korea are setting up ultra-large-scale manufacturing of lithium ion batteries. The long-term cost of supplying grid electricity from today’s lithium-ion batteries is falling even faster than expected, making them an increasingly cost-competitive alternative to natural-gas-fired power plants across a number of key energy markets. As an example, on March 28, 2019 Florida Power and Light in the United States announced that it would retire two natural gas plants and replace those plants with what is likely to be world’s largest photovoltaics-powered battery bank when it’s completed in 2021. Thus, without any doubt, both power and transportation sectors will provide phenomenal growth of power electronics in the 21st century. What role the silicon Carbide (SiC) and gallium nitride (GaN) based power electronics will play in the power and transportation sectors? The importance of SiC based power devices has been realized almost at the same time when silicon based low power devices were being developed in 50s. In the 21st century both SiC and GaN are drawing the attention as potential replacement of Si based power electronics and may open some new markets where Si based power electronics cannot function either due to power or temperature limitations. Public private funding agencies such as United States of Department of Energy have addressed the challenges and opportunities of wide band gap semiconductor power electronics [1]. According to a report from IHS market, the emerging market for SiC and GaN power semiconductors is expected to reach nearly $1 billion in 2020 [2]. While it is true that there exists a niche market GaN products, the phenomenal growth of WBG power electronics is questionable. To compare the cost of Si and GaN based products, we have plotted the cost of Si and GaN MOSFET’s as a function of volume of purchased devices in Figure [3, 4]. For 250 units (highest volume price listed in reference 4), the cost compared to a single GaN transistor has been reduced by 13.8 %. On the other hand, for 250 units, the cost of a single Si transistor is reduced by 35.6 %. Thus, cost is the major barrier in replacing Si based power electronics by WBG based power electronics. In an earlier publication [5], we have discussed the pathways that can lead to the reduction of manufacturing cost of WBG based products. Photovoltaics generates direct current (DC) power and batteries store DC power. As compared to alternating current power, at least 30 % capital cost and the cost of electric power is saved by local DC power networks. Direct current (DC) power enables fast charging of electric vehicles. Thus, the use of low voltage (<1,500 V) local DC power networks will further reduce the need of inverters but will need DC-DC converters. In this paper we will identify the WBG based key power electronics products that should be focused to see high growth of WBG based power electronics. Cost and performance of 48 V induction cooking device based on Si and GaN MOSFET switches will also be presented. References I. C. Kizilyalli, E. P. Carlson, D. W. Cunningham, J. S. Manser, Y. Xu, A. Y. Liu, March 13, 2018. Available at: https://arpae.energy.gov/sites/default/files/documents/files/ARPA-E_Power_Electronics_Paper-April2018.pdf .R. Aden, April 24, 2018. Available at: https://technology.ihs.com/602187/market-for-gan-and-sic-power-semiconductors-to-top-10-billion-in-2027Available at: https://lcsc.com/product-detail/MOSFET_International-Rectifier_IRFP260MPBF_International-Rectifier-IR-IRFP260MPBF_C2679.htmlAvailable at: https://www.mouser.com/ProductDetail/GaN-Systems/GS66508B-E01-MR?qs=etoTMWSvtH88Sj8NJfVvjg%3D%3D&gclid=EAIaIQobChMI1eHK4_O74QIVEYTICh2L3wLREAAYASAAEgKAzfD_BwER. Singh and A.A. Asif, ECS Transactions, 75(12), 11-18, 2016. Figure 1