Abstract
In this work, several electronic devices (e.g. Tunneling FETs and SONOS flash memory) are demonstrated based on vertical Si nanowires manufactured by CMOS process technologies, aiming at ultra-high density applications. The corresponding process technologies and device characteristics will be discussed in this work. Our results suggest that vertical SiNW can be considered as a possible building block for novel electronic devices, especially for sub-10nm technology node.
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