(Invited) Electron Transport in Bulk and 2DEGs in beta-Ga2O3 and kV Class Laterals Device in beta-Ga2O3

Abstract

Monoclinic beta-Ga2O3 and (AlxGa1-x)2O3 alloys are an emerging ultra-widebandgap semiconductor system for next generation power, GHz power switching and RF applications. In this talk, we will present the low field and high field transport simulations in Ga2O3 using first-principles calculations. Density functional theory calculations is used to get the band structure. The density functional perturbation theory is used to understand the lattice dynamics and identify the infrared (IR) active and Raman active phonon modes. Electron-phonon scattering rates are calculated Boltzmann transport equation is solved to calculate the low field mobility, velocity-field profiles and the impact ionization coefficients. The effect of dynamic screening on the electron mobility is evaluated in a two-dimensional electron gas (2-DEG) system in (AlxGa1-x)2O3/Ga2O3 heterostructures.We will also report the Ga2O3 based power and RF devices. MOSFETs with spin-doping source/drain and n+ ohmic capped layers will be presented. kV breakdown voltages are seen with the devices limited by extrinsic breakdown. Temperature dependent characteristics show potential for high temperature applications.