Abstract
Electroluminescence characteristics of metal-oxide-semiconductor tunnel diodes with a silicon nano-layer on silicon-on-insulator substrates have been studied. Peaks in the spectrum from the diode have been observed at ~1030 nm (~1.20 eV), ~950 nm (~1.31 eV), ~910 nm (~1.36 eV) and ~620 nm (~2.00 eV). It is suggested that the electroluminescence at ~620 nm is due to transitions between ultrathin silicon subbands.
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