Abstract
This paper investigates electrical performances of two different transistor array configurations operating as 60GHz power amplifier cells. Maximum RF power gain and a maximum PAE are determined using a load-pull measurement set-up. The electrical and thermal behavior between multi-finger transistor and multi-transistor array are compared. Drawbacks and advantages of each structure are discussed and the current preference of the usage of multi-emitter structures versus multi-transistor structures is questioned.
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