(Invited) Effect of Oxygen on Activation Annealing of Mg-Doped GaN

Abstract

The effects of N2 and O2:N2 (1:1) as ambient gases during activation annealing of Mg as p-type doping of GaN grown by MOCVD are investigated. The purpose is to understand the mechanisms involved and especially the impact of O2 on the resulting free hole concentration and hole mobility. The addition of O2 to the ambient gas during annealing is very effective in reducing the H level of the Mg-doped GaN layer, especially at lower activation temperatures, but the maximum achievable hole concentration and mobility, as determined by Hall characterization, is still higher with pure N2.The difference between activation in pure N2 or O2:N2 (1:1) ambient a is explained by an in-diffusion of O to the GaN layer acting as n-dopant and thus giving rise to a compensation effect. It is found that to a large degree only the Mg-H complexes at substitutional (MgGa), i.e., the electrically active acceptor sites that provide free holes, are activated by annealing with N2 only as ambient gas, while annealing with O2:N2 (1:1) also dissociates electrically inactive Mg-H complexes resulting in much less residual H. Thus, the residual H level in relation to the Mg level after activation annealing with N2 only may provide a representative measure of the resulting free hole concentration of the Mg-doped GaN layer.An additional factor to be taken into account for in order to maximize the hole concentration is the growth pressure. At the lower growth pressure of 150 mbar compared to higher growth pressure of 300 mbar, an increasing carbon incorporation leads to a compensation effect drastically reducing the free hole concentration while the mobility is unaffected. Conclusions Addition of O2 during RTP is very effective in reducing the H level however, the maximum hole concentration and mobility are still higher with pure N2.Mg-H complexes at substitutional (MgGa) electrically active acceptor are preferentially dissociated by annealing with N2 as ambient gas.By employing a higher growth pressure, carbon incorporation that leads to a compensation effect drastically reducing the free hole concentration can be minimized.By activation annealing with N2 the residual H level provides a measure of the free hole concentration. Figure 1