Abstract
As enhancement mode gallium-nitride-on-silicon (eGaN®) FETs gain wider acceptance as the successor to the aged power MOSFET, designers have been able to improve power conversion system efficiency, size, and cost. eGaN FETs, however, are based on a relatively immature technology and only recently have they begun to hit the market in applications such as Power over Ethernet (PoE) and DC-DC converters for telecom and computing applications. An overview of the capability of this technology is followed by the exploration of four common circuit topologies: (1) Flyback converters where costs are sensitive and power levels low, (2) forward converters that are best suited in applications requiring high power density and low power, (3) buck converters for applications requiring high power densities, and (4) full bridge isolated converters for applications requiring high power density, high power, and input-to-output isolation. These four topologies cover the majority of applications where eGaN FETs are making the earliest inroads and offer greatest value to the user.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
