Abstract
Designs of electronic devices using aluminum gallium oxide (ALGO) alloys as the barrier layer and gallium oxide (Ga2O3) as the active layer are being considered. The success of these devices is predicated in part on the ability to achieve controlled doping of the ALGO barrier layer. First-principles calculations using hybrid functionals can be instrumental in guiding this effort. I will highlight which dopants can lead to controlled doping in high-Al content ALGO alloys, identify the optimal doping conditions and discuss the impact of the different ALGO polymorphs on this effort.This work was performed in collaboration with J.B.Varley and J.L. Lyons and was supported by the ONR/NRL 6.1 Basic Research Program.
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