Abstract
This paper shows structures and features of a field-effect transistor (FET) fabricated using a c-axis aligned crystalline In–Ga–Zn oxide (CAAC-IGZO), which is a typical example of crystalline oxide semiconductor (OS) ceramics, as a channel material, and applications of the CAAC-IGZO FET up to this point. In this study, we propose an AI accelerator as novel LSI using an OS (OS LSI) and make a detail description of the AI accelerator.
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