(Invited) Diluted Magnetic Monolayer MoS2 Synthesis, Characterization and Device Applications

Abstract

Keywords: Two dimensional; Monolayer; CVD; Spintronics; Spin injectionRecently, monolayer MoS2 has attracted intensive interests because of its special properties. MoS2-based field effect transistor exhibits a carrier mobility of 900 cm2 V-1 s-1 and an on/off ratio larger than 108.[1] However, its non-magnetic property has retarded its applications in the quantum devices. Diluted magnetic semiconductors have been extensively studied, as it bridges the ferromagnetic and semiconductor properties.[2] It shows a variety of new physical phenomena and functionalities.[3] There is few reports on diluted magnetic monolayer MoS2 semiconductors. In this paper, we design a rational synthesis of diluted magnetic monolayer MoS2 by a simple chemical vapor deposition method. By characterizing the structural, chemical composition, magnetic property, magnetic transport, we confirm the as-synthesized sample is single phase of diluted magnetic monolayer MoS2 with promising ferromagnetic property. We probe the mechanism of the ferromagnetic behavior observed in the as-grown diluted magnetic monolayer MoS2. The spin-injection efficiency is investigated by studying the injected relaxation and lift time. Our results would open up a new path way to develop the future flexible quantum devices and quantum computers.