(Invited, Digital Presentation) Nanostructured Perovskite Resistive RAM for Next Generation Data Storage

Abstract

Resistive RAMs (Re-RAMs) have emerged as a propitious candidate among next generation non volatile memories because of their strikingly fast speed, prolonged data retention ability and high storage density. Herein, we developed an electrochemical metallization (ECM) based Re-RAM with three-dimensionally integrated single-crystalline perovskite (methyl ammonium lead halide or MAPbX3 where X=I, Br and Cl) quantum wire (PQW)/ nanowire (PNW) array embedded in a nano-engineered porous alumina membrane (PAM) serving as the switching medium. The PQWs and PNWs were grown inside the PAM template by a vapor-solid-solid-reaction (VSSR) process and were clubbed between silver (Ag) and aluminum (Al) contacts. The nanostructured perovskite Re-RAM exhibited 100 ps switching speed which is a record for perovskite Re-RAMs and also among the fastest for all types of Re-RAMs reported. The fast switching was attributed to the increased ionic (Ag+) and electronic mobility and subsequent accelerated filament formation within the body of the monocrystalline PQWs/PNWs. The PAM scaffolding imparted material and electrical stability to the environmentally delicate perovskite. As a consequence, we were able to obtain a record long (among perovskite Re-RAMs) estimated retention time > 28 years and record-high (among perovskite Re-RAMs) uninhibited cyclic endurance of 6×106 cycles. Also, utilizing the ultra-high density (2×1011/cm2) of the PQWs, a 14 nm lateral dimension ultra-small memory cell was built. In conjunction with multi-bit switching, an effective device footprint of 76.5 nm2 was achieved for a single bit storage. Further, as a concept proof, an 8×8 Re-RAM crossbar array device was fabricated which demonstrated temporally robust alphabetic data storage, with a unique metal-semiconductor-insulator-metal (MSIM) architecture to alleviate the sneaky path problem. The MSIM scheme based on quasi-self-selecting elements, demonstrated a strong potential for unhindered scalability in the future, a problem often encountered with integrating external selecting diodes and transistors. The PQW/PNW Re-RAMs also responded to light stimuli, exhibiting optical programmability among the low resistance states. In summary, these intriguing results propel perovskite Re-RAMs to the state-of-the-art standard and demonstrate an attractive potency for PQW/PNW devices to be used as an alternative technology in future storage and computing modules.