Abstract
We present various techniques to improve the breakdown performance for β-Ga2O3 based devices both for transistor and diode applications. In spite of having a huge predicted potential, the practical realization of high breakdown field performance is hindered due to the lack of p-type dopants that could provide edge termination and high breakdown field strength dielectric materials as gate oxides in transistors. Low interface state density dielectric/β-Ga2O3 interface is achieved using in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al2O3 on β-Ga2O3. To circumvent the lack of p-type doping, hetero-integration of β-Ga2O3 with p-type III-Nitride is proposed for edge electric field suppression. Another efficient field management technique using extreme permittivity dielectric material as field plate oxide is also demonstrated to achieve very high Baliga’s Figure of Merit (BFOM). Using these approaches the limits of β-Ga2O3 based devices can be expanded for future power electronic applications.
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