(Invited, Digital Presentation) Doping Gallium Oxide and Competing Ultra-Wide Bandgap Oxides

Abstract

Although Ga2O3 is widely believed to be the among most promising ultrawide-bandgap semiconductors, its inability to be p-type doped hampers future applications. Moreover, alloying with aluminum increases the Ga2O3 band gap, but it is unclear if electrical conductivity of AlGO alloys can be controlled. The properties of group-IV (C, Si, Ge, and Sn) and transition metal (Hf, Zr, and Ta) substitutional dopants in AlGO alloys are systematically explored here using first-principles hybrid functional calculations. In Ga2O3, all dopants act as shallow donors. However, in Al2O3 all are deep defects, characterized by DX behavior or the emergence of positive-U (+/0) levels. Combining our calculations of dopant charge-state transition levels with information of the AlGO alloy band structure, the critical Al composition at which each dopant transitions from being a shallow to a deep donor is estimated. Si is identified as being the most efficient dopant to achieve n-type conductivity in high Al-content AlGO alloys, acting as a shallow donor over the entire predicted stability range for AlGO solid solutions. Compensation by other unintentional impurities (such as H and C) is also assessed.Other oxide materials have also emerged as potential competitors to Ga2O3, but their propensity for hole conductivity is less well known. Here the stability of hole polarons in a set of ultrawide-bandgap oxides (Ga2O3, Al2O3, ZnGa2O4, MgGa2O4, LiGaO2 and GeO2) is examined and compared, both in pristine material and in the presence of acceptor impurities. Holes spontaneously self-trap in all oxides investigated, with varying stabilities. Acceptor impurities further stabilize these trapped holes, leading to large acceptor ionization energies. Hole trapping also leads to characteristic distortions and distinct optical transitions, which may explain some experimentally-observed signals. These results indicate that achieving p-type conductivity in any of these oxides is unlikely, with the possible exception of GeO2.This work was performed in collaboration with Darshana Wickramaratne (NRL), Joel Varley (LLNL), Sai Mu (UCSB), Mengen Wang (UCSB) and Chris Van de Walle (UCSB), and was supported by the ONR/NRL 6.1 Basic Research Program.