Abstract
Advanced interconnects require new materials to minimize high frequency signal loss and manage high temperature excursions due Joule heating. In this talk, we will review our on-going material selection modeling, and the thermo-mechanical reliability testing of interconnect prototypes that incorporate 2-D van der Waal thin films. Specifically, we will discuss our use of broadband microwave spectroscopy, that enables the accurate in-operando analysis of the electrical and magnetic properties without compromising the kinetic conditions of the experiment, to investigate high speed signal loss in 3-D integrated test circuits. The BDS method is sensitive to the actual electronic structure of the constituent materials and interfacial processes in the test structures. Using BDS, we have studied and characterized the 2-D van Der Wall, and other chalcogenide thin films in purposely built prototypical 3-D integrated circuit (3D-IC) during cycled high-temperature storage. We show that the microwave signal loss in these devices is attributable to the energy dissipation through the signal’s interactions with the copper barrier / cladding materials.
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