Abstract
We have investigated the crystalline and electronic properties of group-IV semiconductor alloy thin films of Ge1−x Sn x and Ge1−x−y Si x Sn y . These semiconductor materials promise effective energy band engineering with type-I band alignment. Also, we have investigated the optoelectronic properties of Ge1−x−y Si x Sn y /Ge1−x Sn x /Ge1−x−y Si x Sn y double heterostructure with measuring photoluminescence spectroscopy.
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