Abstract
The development of GaN as a quasi-phase matched material for high power frequency conversion by periodically orienting the crystal orientation is presented. For high power applications, thick material on native substrates is required. Recent work has produced periodically oriented (PO) GaN with thicknesses reaching 500μm on N-polar GaN substrates. Work on Ga-polar substrates has progressed, with demonstrations of PO structures. The ability to create PO structures on both polar faces of GaN substrates offers the promise of engineered materials with custom lateral and vertical polarity variations for applications in novel electronic and optoelectronic devices, a subset of which are expected to be suitable for non-linear optics.
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