Abstract
This work reports the characterization and analysis of various types of SiC substrate wafers by a high throughput (2 wafers/hour) X-ray diffraction imaging (XRDI) system. Quantitative maps of various dislocations are obtained using Automated Defect Classification (ADC) and correlated to other defect characterization methods including molten KOH etching and Photoluminescence (PL) scans. Different and often complementary views of the wafer were obtained by integrating the data. Epitaxial layers grown on the substrates show the probabilistic pattern of nucleation for various types of extended defects from defects in the underlying crystal structure. Nucleated Stacking Faults, especially, were well correlated with distributions of Basal Plane dislocations in the substrates.
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