Abstract
We have studied the development of cracks in gas-implanted silicon, from nano-scale to wafer-scale which is at the heart of the SmartCut™ technology. We will discuss the results of X-ray scattering experiments that allow the monitoring of growth of nanometer-size cavities (platelets) from implantation to their full development where they reach sizes of several tens of nanometers. The nucleation, growth and coarsening mechanisms of these nanometer size platelets are interpreted within the Ostwald ripening framework. At larger annealing times, some micron-size defects called microcracks appear, and experience again some competitive growth, dominated by coalescence. The growth of these micron-size objects depends on their interactions with smaller-size platelets. The modelling of this interaction can explain the dependance of split time with temperature. Microcrack development is a key step in the SmartCut™ process. Finally the propagation of the fracture front will be discussed. We will discuss the velocity dependence of the crack front with temperature and present some new measurements of dynamic crack opening displacement. Figure 1
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
